# Late et al., ACS Nano 7, 4879 (2013), Fig. 7 -- sensitivity S(%) vs gas
# concentration (ppm) for 2-layer MoS2, with and without back-gate (+15 V).
# NH3 = electron donor (S<0, resistance drops); NO2 = acceptor (S>0). Gate bias
# tunes selectivity (accumulated electrons boost NO2, repel NH3). Digitized Fig.7.
# gas  conc[ppm]  S_noVg[%]  S_Vg[%]
NH3   100   -30   -15
NH3   200   -45   -27
NH3   500   -58   -45
NH3   1000  -80   -57
NO2   100    50    80
NO2   200   130   200
NO2   500   250   450
NO2   1000  500   870
