# low-field mobility of the MoS2/HfO2 stack vs charged-impurity density (screening at
# 1e13 cm^-2, field 2e5 V/m, 300 K); mean and SE over 4 seeds
# N_imp[m^-2]  mu[cm^2/Vs]  SE
0.000e+00 1.968e+02 6.969e+00
1.000e+16 1.852e+02 5.084e+00
3.000e+16 1.653e+02 1.469e+00
1.000e+17 1.257e+02 1.496e+00
3.000e+17 8.437e+01 2.074e+00
1.000e+18 4.076e+01 1.143e+00
3.000e+18 1.657e+01 9.526e-01
