# low-field mobility of the MoS2/HfO2 stack vs charged-impurity density (screening at
# 1e13 cm^-2, field 2e5 V/m, 300 K); mean and SE over 4 seeds
# N_imp[m^-2]  mu[cm^2/Vs]  SE
0.000e+00 1.686e+02 2.239e+00
1.000e+16 1.489e+02 2.847e+00
3.000e+16 1.372e+02 1.481e+00
1.000e+17 1.036e+02 1.223e+00
3.000e+17 6.596e+01 1.910e+00
1.000e+18 3.496e+01 7.487e-01
