# low-field mobility of the MoS2/HfO2 stack vs charged-impurity density (screening at
# 1e13 cm^-2, field 2e5 V/m, 300 K); mean and SE over 4 seeds
# N_imp[m^-2]  mu[cm^2/Vs]  SE
0.000e+00 1.884e+02 4.652e+00
1.000e+16 1.733e+02 2.793e+00
3.000e+16 1.477e+02 3.207e+00
1.000e+17 1.104e+02 3.348e+00
3.000e+17 6.307e+01 3.153e+00
1.000e+18 2.966e+01 1.411e+00
3.000e+18 1.334e+01 1.899e-01
